Atomic Intelligence delivers next-generation MEP (Multislice Electron Ptychography) software and expert data analysis services for atomic-resolution electron microscopy — beyond the limits of conventional TEM labs.
原子智能提供新一代 MEP（多切片电子叠层成像）软件与专业数据分析服务，突破传统透射电镜实验室的极限，实现原子分辨率的定量表征。
Traditional third-party labs like Wintech Nano excel at sample-based FA and material analysis. We complement them with algorithm-driven, atomic-resolution reconstruction that no conventional lab can deliver.
No physical lab, no sample shipping. Send your 4D-STEM dataset, get atomic-resolution results remotely.
Sub-picometer position accuracy vs. nanometer-scale conventional TEM. See individual atomic columns and their displacements.
Reconstruct specimens >100 nm thick with atomic precision. Conventional SSB/TEM fails beyond 20–30 nm.
GPU-accelerated reconstruction in minutes, not days. No lab queue, no instrument scheduling conflicts.
We don't replace third-party labs — we unlock capabilities they cannot provide. Here's the side-by-side comparison.
| Capability | Atomic Intelligence | Conventional Lab (e.g., Wintech) |
|---|---|---|
| Spatial Resolution | Sub-picometer (atomic column) | Nanometer to sub-nanometer |
| Specimen Thickness | >100 nm (MEP multislice) | <30 nm (conventional TEM) |
| Analysis Mode | Software + Remote data service | Physical lab + Sample shipping |
| Turnaround Time | Hours to days (GPU parallel) | Days to weeks (lab queue) |
| Quantitative Output | Strain tensor, displacement field, polarization map | Morphology, EDS mapping, failure location |
| Data Format | 4D-STEM / Ptychography native | SEM / TEM / FIB / EDS / EELS |
| Use Case Focus | Atomic-scale defect physics, interface structure, phase transitions | Yield improvement, FA root-cause, reliability testing |
| Cost Model | Software license + Per-dataset service | Per-sample testing fee (~¥10K–30K/case) |
| Best For | Research groups, advanced-node FA, DFT-EM validation | Production FA, material qualification, reliability certification |
High-throughput, GPU-accelerated multislice electron ptychography for atomic-resolution imaging beyond the conventional depth and thickness limits.
CUDA-optimized multislice propagation achieving 100× speedup over CPU baselines. Handle large-scale 4D-STEM datasets (512×512×64×64) in minutes, not hours.
A100 / H100 / RTX Pro 6000 ReadyProprietary multi-slice algorithms reconstruct thick specimens (>100 nm) with atomic precision—unreachable by conventional SSB/Wigner distribution methods. Ideal for bulk interfaces and 3D-IC TSV structures.
3D-IC / GAA / CFET CompatibleBuilt-in probe aberration correction (C1, C3, C5), scan distortion rectification, and tilt-axis refinement—ensuring quantitative accuracy for every reconstruction. Passes ISO 17025 traceability requirements.
Quantitative / ISO 17025 TraceableSeamless data pipeline from JEOL ARM / Thermo Fisher Spectra / Nion HERMES. Automated batch processing, metadata preservation, and LIMS-compatible JSON/XML reporting for FA labs.
LIMS / SEMI E142 / SECS-GEMMEP reconstruction requires pixelated detectors and aberration-corrected STEM platforms. Our software natively supports the leading 4D-STEM hardware ecosystem.
Cold-FEG double Cs-corrected STEM with sub-Å probe and highest stability for atomic-resolution 4D-STEM ptychography.
X-FEG / X-CFEG monochromated platforms with X lens corrector. Excellent for low-dose ptychography and EELS-correlated 4D-STEM.
Ultra-high vacuum cold-field emission STEM with Nion-designed quadrupole-octupole correctors. Best-in-class probe coherence for ptychography.
Dedicated STEM platforms with probe aberration correction and high-tilt capability. Cost-effective entry point for 4D-STEM ptychography.
Legacy but widely deployed platforms. With pixelated detector retrofit and probe corrector upgrade, capable of high-quality 4D-STEM ptychography.
Custom-built 4D-STEM setups using open-source scan controllers (e.g., TEM Extensibility Interface) and home-built pixelated detectors. We provide SDK integration support.
128×128 pixel array, 1M fps, 24-bit dynamic range. The gold standard for 4D-STEM ptychography.
Event-driven readout, zero noise, 55 µm pixel pitch. Timepix3 adds TOF capability for energy-resolved 4D-STEM.
Medipix3 ASIC-based, 1.2M fps burst mode, radiation hard. Widely used in materials science 4D-STEM.
512×512 direct electron detector, 4,000 fps, optimized for 4D-STEM diffraction pattern capture at high speed.
Direct detection electron counting. K3 IS supports in-situ 4D-STEM with high DQE and large field of view.
Large-format direct detection, 64 MP, optimized for low-dose diffraction and large momentum transfer capture.
Split pn-junction CCD, 1,000 fps, radiation tolerant. Excellent for high-energy electron diffraction (MeV range).
Hybrid pixel detector with adaptive gain. Optimized for simultaneous EELS and 4D-STEM acquisition.
Hybrid-pixel electron-counting detector purpose-built for 4D-STEM. Up to 120 kfps with noise-free readout and high dynamic range — ideal for ptychography with dwell times below 10 µs.
From raw 4D-STEM datasets to publication-ready atomic structures — our team handles the full analytical pipeline so you can focus on the science. No lab queue, no instrument downtime.
Full ptychographic reconstruction with multislice propagation, including phase retrieval, probe recovery, and depth-sectioning for thick specimens.
Atomic-column position mapping, strain tensor extraction, displacement field visualization, and octahedral tilt quantification with sub-picometer precision.
Multislice image simulation, structure model validation, and DFT-EM joint analysis to confirm experimental interpretations with theoretical ground truth.
Publication-grade figure preparation, 3D atomic structure rendering, and comprehensive analytical reports with full methodology documentation.
On-demand TEM data analysis for semiconductor failure analysis — defect characterization, interface analysis, and process-induced strain evaluation at the atomic scale.
Customized workshops on MEP theory, 4D-STEM experimental design, and data analysis workflows for your research group or FA team.
Real-world scenarios where conventional labs reach their limits and MEP delivers breakthrough insights.
Conventional TEM cannot handle >50 nm thick TSV cross-sections. MEP reconstructs 100+ nm Cu/SiO₂ interfaces at atomic resolution, revealing diffusion barriers and void formation.
Sub-picometer strain tensors across nanosheet stacks. Quantify process-induced strain in 2nm-class devices — critical for mobility engineering and threshold voltage tuning.
Map polarization vortices, skyrmions, and flux-closure domains in HfO₂-based ferroelectrics. Direct observation of atomic displacements enables predictive device modeling.
Atomic-resolution observation of Li-ion migration paths across solid-electrolyte / cathode interfaces. Identify dendrite nucleation sites and grain boundary defects in LLZO/LCO stacks.
Our technology stack combines cutting-edge algorithms with high-performance computing to deliver results you can trust.
Transparent, efficient, and collaborative — from first contact to final delivery. No lab queue, no shipping delays.
Share your 4D-STEM dataset via secure cloud link. We evaluate data quality and define analysis scope within 24 hours.
Receive a detailed plan with timeline, pricing, and deliverables. No charge if the proposal doesn't meet your needs.
Our team executes reconstruction and quantitative analysis on GPU clusters. Progress updates every 48 hours.
Live walkthrough of results, followed by delivery of figures, source data, and methodology documentation.
Atomic Intelligence was founded by a team of electron microscopy experts and HPC software engineers with a shared mission: to make atomic-resolution analysis accessible, fast, and quantitative.
We don't compete with traditional third-party labs like Wintech Nano — we complement them. While they excel at sample-based FA, material qualification, and reliability testing, we unlock the atomic-scale insights that conventional TEM cannot reach: sub-picometer strain tensors, 3D atomic structures in thick specimens, and quantitative polarization maps.
Our clients include leading research groups pushing the frontiers of materials science and semiconductor FA labs at advanced nodes (3nm and below) where atomic precision is no longer optional.
原子智能由电子显微学专家与高性能计算软件工程师团队创立，共同使命是：让原子分辨率分析变得可及、快速且定量化。
我们不与传统第三方实验室（如胜科纳米）竞争——我们与之互补。它们在样品送检式失效分析、材料认证和可靠性测试方面表现出色，而我们解锁传统透射电镜无法触及的原子尺度洞察：亚皮米级应变张量、厚样品中的三维原子结构、以及定量化极化图。
我们的客户包括推动材料科学前沿的领先研究团队，以及先进制程（3nm 及以下）的半导体失效分析实验室——在这些节点，原子精度不再是可选项，而是必需品。
TEM / MEP / 4D-STEM
CUDA / HPC / Algorithms
Analysis / Visualization
Semiconductor / Industry
Send us your dataset or questions. We typically respond within 24 hours with a preliminary assessment and proposal.
contact@atomic-intelligence.com
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Hangzhou, China · Remote Worldwide
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